Features

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1.8 V to 3.3 V nominal supply

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3.6 V max. operating

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4.8 V AMR

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Very high speed: propagation delay of 3 ns maximum guaranteed

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Pure CMOS process

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CMOS output

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Ultra low power

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300 krad TID targeted

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Applications

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Oscillators in space applications

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FPGA

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Microcontrollers

Description

The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate,

designed for radiation hardness and characterized in total ionization dose (TID) and

single event effect (SEE).

It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-

PRF-38535 to comply with the needs of space applications. It can work from -55 °C

to +125 °C ambient temperature.

Product status link

RHFAHC00

Rad-Hard, quad high speed NAND gate

RHFAHC00

Datasheet

DS12465 - Rev 2 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com