STPSC10065 datasheet(1/13 Pages) STMICROELECTRONICS

Part #	STPSC10065

Description	650 V, 10 A low VF power Schottky silicon carbide diode

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 13 page

K

A

TO-220AC

K

A

K

D²PAK HV

K

NC

A

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Dedicated to PFC applications

•

High forward surge capability

•

Operating Tj from -40 °C to 175 °C

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

•

ECOPACK2 compliant component

Applications

•

DC/DC converter

•

High frequency inverter

•

Snubber

•

Boost PFC function

Description

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

Product label

Product status link

STPSC10065

Product summary

Symbol

Value

IF(AV)

10 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

650 V, 10 A low VF power Schottky silicon carbide diode

STPSC10065

Datasheet

DS12185 - Rev 3 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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