RF2L27015CG2 datasheet(3/11 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

±100

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 600 μA

1.75

2.50

VDS = 1 V, IDS = 600 μA

VGS(Q)

Gate quiescent voltage

VDS = 1 V, IDS = 180 mA

2.65

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 0.18 A

150

VGS = 10 V, IDS = 0.75 A

650

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

RDS(on)

Static drain-source on-resistance

VGS = 10 V, IDS = 0.18 A

Ω

VGS = 10 V, IDS = 0.75 A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Frequency

700

2700

MHz

POUT

Output power

f = 2690 MHz, at 1dB compression point,

pulsed CW

GPS

Power gain

ηD

Drain efficiency

VSWR

Load mismatch

POUT = 15 W, pulsed CW, all phases

10:1

Note:

VDD = 28 V, IDQ = 110 mA, PW = 10 μs, duty cycle = 12%.

RF2L27015CG2

Electrical characteristics

DS13245 - Rev 3

page 3/11

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