2

Electrical characteristics

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

110

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 50 V

1

μA

VGS = 0 V, VDS = 90 V

IGSS

Gate-source leakage current

VGS = -8/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 50 V, IDS = 600 µA

1

3

V

VGS(Q)

Gate quiescent voltage

VDS = 1 V, IDS = 100 mA

2

5

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 1 A

1.1

V

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 0.1 V

2.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 0.1 V

1

Ω

Ciss

Common source input

capacitance

VGS = 0 V, VDD= 50 V, f = 1 MHz

28

pF

Crss

Common source feedback

capacitance

0.4

pF

Coss

Common source output

capacitance

12

pF

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

f = 1 GHz

-

30

W

GPS

Power gain

-

23.5

dB

ηD

Drain efficiency

-

50

%

VSWR

Load mismatch

POUT = 30 W, all phases

-

10:1

Note:

VDD = 50 V, IDQ = 0.1 A, pulsed CW, pulse width = 100 μs, duty cycle = 10%.

RF5L15030CB2

Electrical characteristics

DS13641 - Rev 2

page 3/12