Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1533 A/µs,

TJ = 150 °C

124

ns

tr

Current rise time

18

ns

Eon(1)

Turn-on switching energy

1.8

mJ

td(off)

Turn-off delay time

VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 6700 V/µs,

TJ = 150 °C

142

ns

tf

Current fall time

256

ns

Eoff(2)

Turn-off switching energy

3.1

mJ

tSC

Short-circuit withstand time

VCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C

10

µs

RTHj-c

Thermal resistance junction-

to-case

Each IGBT

0.55

0.60

°C/W

RTHc-h

Thermal resistance case-to-

heatsink

Each IGBT, λgrease = 1 W/(m·°C)

0.70

°C/W

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.2

Diode

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

V

IF

Continuous forward current at TC = 100 °C

35

A

IFP(1)

Pulsed forward current (tp = 1 ms)

70

A

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

(terminal)

Forward voltage

IF = 35 A

-

2.95

4.1

V

IF = 35 A, TJ = 150 ˚C

-

2.3

trr

Reverse recovery time

IF = 35 A, VR = 600 V,

VGE = ±15 V, di/dt = 1900 A/μs

-

140

ns

Qrr

Reverse recovery charge

-

2.62

µC

Irrm

Reverse recovery current

-

54

A

Erec

Reverse recovery energy

-

1.2

mJ

A1P35S12M3-F

Diode

DS11636 - Rev 5

page 3/16