DATA SHEET

www.onsemi.com

© Semiconductor Components Industries, LLC, 2012

August, 2021 − Rev. 8

1

Publication Order Number:

BC546/D

Amplifier Transistors

NPN Silicon

BC546B, BC547A, B, C,

BC548B, C

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

BC546

BC547

BC548

VCEO

65

45

30

Vdc

Collector - Base Voltage

BC546

BC547

BC548

VCBO

80

50

30

Vdc

Emitter - Base Voltage

VEBO

6.0

Vdc

Collector Current − Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the onsemi Soldering and Mounting Techniques Reference Manual,

SOLDERRM/D.

COLLECTOR

1

2

BASE

3

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1 2

3

1

2

BENT LEAD

TAPE & REEL

STRAIGHT LEAD

3

TO−92

CASE 29

STYLE 17

MARKING DIAGRAM

BC

54xy

AYWW G

G

x

= 6, 7, or 8

y

= A, B or C

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)