STN484D. datasheet(4/8 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

0.01

0.001

0.1

100

TJ = 150 °C

TJ = 25 °C

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

012

345

910

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 125 °C

ID =10A

120

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

Limited byRDS(on)*

10 s

BVDSS

Limited

STN484D.

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