Characteristics

FERD40L60C

2/12

DocID030964 Rev 1

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 130 °C

Per diode

20

A

Per device

40

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

250

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

+150

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.3

°C/W

Per device

0.8

Rth(c)

Coupling

0.3

Table 4: Static electrical characteristics, per diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

1.1

mA

Tj = 125 °C

-

40

80

Tj = 125 °C

VR = 45 V

-

23

46

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 4 A

-

0.32

0.36

V

Tj = 125 °C

-

0.26

0.3

Tj = 25 °C

IF = 10 A

-

0.4

0.445

Tj = 125 °C

-

0.375

0.425

Tj = 25 °C

IF = 20 A

-

0.49

0.545

Tj = 125 °C

-

0.515

0.58

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.27 x IF(AV) + 0.0155 x IF2(RMS)