EGF1THE3SLASH67A datasheet(2/4 Pages) VISHAY

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EGF1T

Vishay General Semiconductor

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Document Number: 88904

Revision: 13-May-08

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

Note:

(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.95 x 0.95" (24 x 24 mm) copper pad areas

Note:

(1) Automotive grade AEC Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

EGF1T

UNIT

Maximum instantaneous forward voltage (1)

1.0 A

TJ = 25 °C

3.0

Maximum DC reverse current (2)

VRM

TJ = 25 °C

TJ = 125 °C

5.0

µA

Typical reverse recovery time

IF = 0.5 A, IR =1.0 A,

Irr = 0.25 A

trr

Typical junction capacitance

4.0 V, 1 MHz

8.0

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

EGF1T

UNIT

Typical thermal resistance (1)

RθJA

RθJL

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

EGF1T-E3/67A

0.104

67A

1500

7" diameter plastic tape and reel

EGF1T-E3/5CA

0.104

5CA

6500

13" diameter plastic tape and reel

EGF1THE3/67A (1)

0.104

67A

1500

7" diameter plastic tape and reel

EGF1THE3/5CA (1)

0.104

5CA

6500

13" diameter plastic tape and reel

Figure 1. Maximum Forward Current Derating Curve

1.5

100

125

150

175

0.5

1.0

TL - Lead Temperature (°C)

Figure 2. Maximum Non-Repetitive Forward Surge Current

110

100

Number of Cycles

EGF1THE3/67A Datasheet(PDF) 2 Page - Vishay Siliconix

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