STB12N60DM2AG datasheet(2/15 Pages) STMICROELECTRONICS

Part #	STB12N60DM2AG

Description	Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.3

IDM(1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

125

dv/dt(2)

Peak diode recovery voltage slope

100

V/ns

di/dt(2)

Peak diode recovery current slope

1000

A/μs

dv/dt(3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 10 A, VDS (peak) < V(BR)DSS, VDD = 400 V.

3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

°C/W

RthJB(1)

Thermal resistance, junction-to-board

1. When mounted on 1 inch² FR-4 board, 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR (1)

Avalanche current, repetitive or not repetitive

EAS(2)

Single pulse avalanche energy

250

1. Pulse width limited by TJ max.

2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.

STB12N60DM2AG

Electrical ratings

DS13374 - Rev 2

page 2/15

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