STGO30H60DLLFBAG datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STGO30H60DLLFBAG

Description	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

Figure 7. Collector current vs switching frequency

GADG250120221033CCS

10 0

10 1

10 2

(A)

f (kHz)

TC= 80 °C

TC= 100°C

Rectangular current shape

(duty cycle = 0.5, VCC = 400 V,

RG = 10 Ω, VGE= 0 to 5 V,

TJ = 175 °C

Figure 8. Forward bias safe operating area

GADG240120220955FSOA

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(A)

VCE (V)

tp=10 µs

tp=1 µs

tp=1 ms

V(BR)CES

single pulse

TC = 25 °C

TJ ≤ 175 °C

tp=100 µs

Figure 9. Typical transfer characteristics

GADG240120220955TCH

120

100

1.5

2.5

(A)

VGE (V)

VCE=5 V

TJ= 25 °C

TJ= 175 °C

Figure 10. Typical reverse diode forward characteristics

IGBT181020161526DVF

2.4

2.0

1.6

1.2

0.8

0.4

100

(V)

IF (A)

TJ = -50 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized gate threshold vs temperature

GADG240120220959NVGE

1.2

1.0

0.8

0.6

0.4

-75

-25

125

175

VGE(th)

(Norm.)

TJ (°C)

IC= 1 mA

Figure 12. Normalized breakdown voltage vs temperature

GADG240120221000NVBR

1.12

1.08

1.04

1.00

0.96

0.92

0.88

-75

-25

125

175

V(BR)CES

(Norm.)

TJ (°C)

IC = 1 mA

STGO30H60DLLFBAG

Electrical characteristics (curves)

DS12913 - Rev 4

page 5/15

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