STL64N4F7AG datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On-/off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID= 1 mA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS= 40 V

µA

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 32 A

7.0

8.5

mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS= 0 V

637

Coss

Output capacitance

240

Crss

Reverse transfer capacitance

Total gate charge

VDD = 20 V, ID = 64 A,

VGS = 0 to 10 V

(see Figure 13. Test circuit for gate

charge behavior)

9.8

Qgs

Gate-source charge

3.8

Qgd

Gate-drain charge

3.1

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 32 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for

resistive load switching times and

Figure 17. Switching time

waveform)

18.8

Rise time

102.6

td(off)

Turn-off delay time

21.4

Fall time

13.3

Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD (1)

Forward on voltage

ISD = 64 A, VGS = 0 V

1.3

trr

Reverse recovery time

ID = 64 A, di/dt = 100 A/µs

VDD = 32 V (see Figure 14. Test

circuit for inductive load switching

and diode recovery times)

27.5

Qrr

Reverse recovery charge

17.3

IRRM

Reverse recovery current

1.4

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STL64N4F7AG

Electrical characteristics

DS12596 - Rev 2

page 3/15

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