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STL7LN65K5AG Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL7LN65K5AG
Description  Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL7LN65K5AG Datasheet(HTML) 3 Page - STMicroelectronics

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2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
650
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V
1
µA
VGS = 0 V, VDS = 650 V,
TC = 125 °C (1)
50
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID =100 µA
3
4
5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 2.5 A
0.95
1.15
Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz, VGS = 0 V
-
270
-
pF
Coss
Output capacitance
-
22
-
pF
Crss
Reverse transfer capacitance
-
0.5
-
pF
Co(er) (1)
Equivalent capacitance energy
related
VDS = 0 to 520 V, VGS = 0 V
-
20
-
nC
Co(tr) (2)
Equivalent capacitance time
related
-
57
-
nC
RG
Intrinsic gate resistance
f = 1 MHz, ID=0 A
-
7.5
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 5 A, VGS = 0
to 10 V (see Figure 14. Test circuit
for gate charge behavior)
-
11.7
-
nC
Qgs
Gate-source charge
-
2.7
-
nC
Qgd
Gate-drain charge
-
7.3
-
nC
1. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases
from 0 to 80% VDSS
2. Time related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases
from 0 to 80% VDSS
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 2.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
-
7.4
-
ns
tr
Rise time
-
9.2
-
ns
td(off)
Turn-off delay time
-
19.8
-
ns
tf
Fall time
-
16.4
-
ns
STL7LN65K5AG
Electrical characteristics
DS13267 - Rev 2
page 3/16



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