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2SC5975 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SC5975
Description  SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR
PDF  18 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5975 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SC5975
Rev.1.00, Jul.06.2004, page 4 of 17
Noise Figure vs. Collector Current
0
1
2
3
4
5
1
10
100
Collector Current
IC (mA)
f = 1.8 GHz
VCE = 1 V
2 V
3 V
Power Gain vs. Collector Current
0
2
4
6
8
10
12
14
16
18
20
1
10
100
Collector Current
IC (mA)
f = 1.8 GHz
VCE = 1 V
2 V
3V
S21 Parameter vs. Collector Current
0
5
10
15
20
25
1
10
100
Collector Current
IC (mA)
Gain Bandwidth Product vs. Collector Current
0
5
10
15
20
25
1
10
100
Collector Current
IC (mA)
MSG
• MAG vs. Collector Current
0
5
10
15
20
25
30
1
10
100
Collector Current
IC (mA)
Typical Transfer Characteristics
0
5
10
15
20
25
30
35
40
45
50
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Emitter to Base Voltage VEB (V)
VCE = 2 V
VCE = 1 V
2 V
3 V
f = 2 GHz
VCE = 1 V
2 V
3 V
f = 2 GHz
f = 2 GHz
VCE = 1 V
2 V
3 V
MSG
MAG



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