STL8N65M2 datasheet(2/15 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

2.6

IDM

Drain current pulsed

PTOT

Total power dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or non-repetitive (pulse width limited by Tj max)

0.9

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

dv/dt (2)

Peak diode recovery voltage slope

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 4 A, di/dt ≤ 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.6

°C/W

Rthj-pcb (1) Thermal resistance junction-pcb

°C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board

Table 3. Thermal data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not

repetetive (pulse width limited by Tjmax)

0.5

°C/W

EAS

Single pulse avalanche energy (starting

Tj = 25 °C, ID = IAR; VDD = 50 V)

°C/W

STL8N65M2

Electrical ratings

DS13016 - Rev 1

page 2/15

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