STO68N65DM6 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STO68N65DM6

Description	N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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TO-LL type A2

Drain (TAB)

Gate(1)

Driver

source (2)

Power

source (3, 4, 5, 6, 7,8)

N-chG1DS2PS345678DTABZ

Features

Order code

VDS

RDS(on) max.

ID

STO68N65DM6

650 V

65 mΩ

55 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

•

Excellent switching performance thanks to the extra driving source pin

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STO68N65DM6

Product summary

Order code

STO68N65DM6

Marking

68N65DM6

Package

TO-LL type A2

Packing

Tape and reel

N-channel 650 V, 53 mΩ typ., 55 A MDmesh DM6 Power MOSFET

in a TO

‑LL package

STO68N65DM6

Datasheet

DS13723 - Rev 1 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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