STP35N60M2-EP datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STP35N60M2-EP

Description	N-channel 600 V, 0.110 typ., 26 A MDmesh™ M2 EP Power MOSFET in a TO-220 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 14 page

May 2017

DocID030578 Rev 1

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This is information on a product in full production.

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STP35N60M2-EP

N-

channel 600 V, 0.110 Ω typ., 26 A MDmesh™ M2 EP

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS @

TJmax

RDS(on)

max.

ID

STP35N60M2-EP

650 V

0.130 Ω

26 A



Extremely low gate charge



Excellent output capacitance (COSS) profile



Very low turn-off switching losses



100% avalanche tested



Zener-protected

Applications



Switching applications



Tailored for very high-frequency converters

(f > 150 kHz)

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP35N60M2-EP

35N60M2EP

TO-220

Tube

1

2

3

TO-220

TAB

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STP35N60M2-EP Datasheet(PDF) 1 Page - STMicroelectronics

STP35N60M2-EP Datasheet(HTML) 1 Page - STMicroelectronics

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