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STP65N045M9 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP65N045M9
Description  N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP65N045M9 Datasheet(HTML) 1 Page - STMicroelectronics

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background image
1
2
3
TO-220
TAB
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
RDS(on) max.
ID
STP65N045M9
650 V
45 mΩ
55 A
•
Worldwide best FOM RDS(on)*Qg among silicon-based devices
•
Higher VDSS rating
•
Higher dv/dt capability
•
Excellent switching performance
•
Easy to drive
•
100% avalanche tested
Applications
•
High efficiency switching applications
Description
This N-channel Power MOSFET is based on the most innovative super-junction
MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very
low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain
manufacturing process which allows an enhanced device structure. The resulting
product has one of the lower on-resistance and reduced gate charge values,
among all silicon based fast switching super-junction Power MOSFETs, making
it particularly suitable for applications that require superior power density and
outstanding efficiency.
Product status link
STP65N045M9
Product summary
Order code
STP65N045M9
Marking
65N045M9
Package
TO-220
Packing
Tube
N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET
in a TO-220 package
STP65N045M9
Datasheet
DS13506 - Rev 4 - May 2022
For further information contact your local STMicroelectronics sales office.
www.st.com


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