STU3N65M6 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS Drain-source breakdown voltage

VGS= 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V, TC = 125 °C (1)

100

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.25

3.75

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1.75 A

1.4

1.5

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

150

Coss

Output capacitance

Crss

Reverse transfer

capacitance

0.7

Coss eq. (1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0 V

Intrinsic gate

resistance

f = 1 MHz, ID=0 A

5.2

Ω

Total gate charge

VDD = 520 V, ID = 3.5 A, VGS= 0 to 10 V, (see Figure 14. Test

circuit for gate charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

3.2

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

Turn-on delay

time

VDD= 325 V, ID = 1.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test

circuit for resistive load switching times and Figure 18. Switching time

waveform)

5.2

Rise time

5.4

td(off)

Turn-off delay

time

14.1

Fall time

17.1

STU3N65M6

Electrical characteristics

DS11590 - Rev 2

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