STWA67N60DM6 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STWA67N60DM6

Description	N-channel 600 V, 45 m typ., 58 A MDmesh DM6 Power MOSFET in a TO‑247 long leads package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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TO-247 long leads

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STWA67N60DM6

600 V

54 mΩ

58 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STWA67N60DM6

Product summary

Order code

STWA67N60DM6

Marking

67N60DM6

Package

TO-247 long leads

Packing

Tube

N-channel 600 V, 45 mΩ typ., 58 A MDmesh DM6 Power MOSFET in a

TO

‑247 long leads package

STWA67N60DM6

Datasheet

DS12933 - Rev 4 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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STWA67N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

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