STWA68N65DM6 datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STWA68N65DM6

Description	N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 12 page

Figure 7. Typical capacitance characteristics

GADG060520201021CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

Ciss

Co ss

Cr ss

f = 1 MHz

Figure 8. Typical output capacitance stored energy

GADG060520201022EOS

100 200 300 400 500 600

VDS (V)

Figure 9. Normalized gate threshold vs temperature

GADG060520201018VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID = 250 μA

Figure 10. Normalized on-resistance vs. temperature

GADG060520201019RON

2.2

1.8

1.4

1.0

0.6

0.2

-75

-25

125

RDS(on)

(norm.)

VGS = 10 V

TJ (°C)

Figure 11. Normalized breakdown voltage vs temperature

GADG060520201020BDV

1.08

1.04

1.00

0.96

0.92

0.88

-75

-25

125

V(BR)DSS

(norm.)

ID = 1 mA

TJ (°C)

Figure 12. Typical reverse diode forward characteristics

GADG060520201020SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ = -50 °C

TJ = 25 °C

TJ = 150 °C

STWA68N65DM6

Electrical characteristics (curves)

DS12367 - Rev 3

page 6/12

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