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STWA75N65DM6 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STWA75N65DM6
Description  N-channel 650 V, 33 m typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STWA75N65DM6 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG200920210950CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
f = 1 MHz
Ciss
Coss
Crss
Figure 8. Typical output capacitance stored energy
GADG200920210953EOS
50
40
30
20
10
0
0
100 200 300 400 500 600
EOSS
(µJ)
VDS (V)
Figure 9. Normalized gate threshold vs temperature
GADG210920211257VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID =250 µA
Figure 10. Normalized on-resistance vs. temperature
GADG200920210952RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VDS=10 V
Figure 11. Normalized breakdown voltage vs temperature
GADG200920210952BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID=1 mA
Figure 12. Typical reverse diode forward characteristics
GADG200920210953SDF
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
10
20
30
40
50
60
70
VSD
(V)
ISD (A)
TJ = -50 °C
TJ = 25 °C
TJ = 150 °C
STWA75N65DM6
Electrical characteristics (curves)
DS13828 - Rev 1
page 6/12



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