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STL24N65M2 Datasheet(PDF) 7 Page - STMicroelectronics |
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STL24N65M2 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() STL24N65M2 Electrical characteristics DocID027182 Rev 1 7/15 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Output capacitance stored energy C 10 1 0.1 1 100 VDS(V) 10 (pF) 0.1 100 1000 Ciss Coss Crss f= 1 MHz GIPD041020141619FSR RDS(on) 1 -75 -25 75 Tj(°C) 25 (norm) 0.2 125 0.6 1.4 1.8 2.2 VGS= 10V GIPD180920141459FSR VSD 0.7 0 4 12 ISD(A) 8 (V) 0.5 0.6 0.8 0.9 Tj= 150°C Tj= -50°C Tj= 25°C 16 1 1.1 GIPD041020141624FSR E 2 0 100 300 VDS(V) 200 (µJ) 0 400 500 600 4 6 8 GIPD041020141629FSR |
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