STL26N65DM2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STL26N65DM2

Description	N-channel 650 V, 0.182 typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GADG120620181205SOA

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

10 3

(A)

VDS (V)

tp =10 µs

tp =100 µs

tp =1 ms

tp =10 ms

Single pulse,

TC = 25 °C, TJ ≤ 150 °C

Operation in this area

is limited by RDS(on)

tp = 1 μs

Figure 2. Thermal impedance

PowerFLAT8x8HVzth

10 -1

10 -2

10 -5

10 -4

10 -3

10 -2

t p (s)

Single pulse

δ =0.01

δ =0.1

δ =0.2

δ =0.5

δ =0.05

δ =0.02

Z th =K*R thj-c

δ=t p / Ƭ

Figure 3. Output characteristics

GIPG201220170957OCH

(A)

VDS (V)

VGS = 5 V

VGS = 6 V

VGS = 7 V

VGS = 8, 9, 10 V

Figure 4. Transfer characteristics

GIPG201220170957TCH

(A)

VGS (V)

VDS = 20 V

Figure 5. Gate charge vs gate-source voltage

GIPG201220170958QVG

600

500

400

300

200

100

VGS

(V)

VDS

(V)

Qg (nC)

VDD = 520 V

ID = 20 A

VDS

Figure 6. Static drain-source on-resistance

GADG030720181100RID

0.194

0.190

0.186

0.182

0.178

0.174

0.170

RDS(on)

(Ω)

ID (A)

VGS = 10 V

STL26N65DM2

Electrical characteristics (curves)

DS12623 - Rev 1

page 5/15

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