© Semiconductor Components Industries, LLC, 2012

December, 2012 − Rev. 11

1

Publication Order Number:

MMDF1N05E/D

MMDF1N05E, MVDF1N05E

Power MOSFET

2 A, 50 V, N−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. These devices

are designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are dc−dc

converters, and power management in portable and battery powered

products such as computers, printers, cellular and cordless phones.

They can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives. The avalanche energy is

specified to eliminate the guesswork in designs where inductive loads

are switched and offer additional safety margin against unexpected

voltage transients.

Features

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• IDSS Specified at Elevated Temperature

• This is a Pb−Free Device

• MVDF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDS

50

V

Gate−to−Source Voltage − Continuous

VGS

± 20

V

Drain Current − Continuous

Drain Current − Pulsed

ID

IDM

2.0

10

A

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 V, VGS = 10 V, IL = 2 Apk)

EAS

300

mJ

Operating and Storage Temperature Range

TJ, Tstg −55 to 150

°C

Total Power Dissipation @ TA = 25°C

PD

2.0

W

Thermal Resistance, Junction−to−Ambient

(Note 1)

RqJA

62.5

°C/W

Maximum Temperature for Soldering,

Time in Solder Bath

TL

260

10

°C

Sec

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−1

Drain−2

Drain−2

2 AMPERE, 50 VOLTS

RDS(on) = 300 mW

Device

Package

Shipping†

ORDERING INFORMATION

N−Channel

D

S

G

PIN ASSIGNMENT

http://onsemi.com

MMDF1N05ER2G

SO−8

(Pb−Free)

2,500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SO−8

CASE 751

STYLE 11

MARKING

DIAGRAM

F1N05 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

F1N05

AYWWG

G

1

8

1

8

MVDF1N05ER2G

SO−8

(Pb−Free)

2,500/Tape & Reel