GD25Q41ASIGY datasheet(41/51 Pages) GIGADEVICE

Part #	GD25Q41ASIGY

Description	Uniform Sector Dual and Quad Serial Flash

PDF	51 Pages

Scroll/Zoom	100%

Manufacturer	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

Direct Link	http://www.gigadevice.com/

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41 / 51 page

Uniform Sector

Dual and Quad Serial Flash

GD25Q21B

8. ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Vcc(max)

Vcc(min)

VWI

Reset

State

tPUW

tVSL

Chip Selection is not allowed

Program, Erase and Read command are ignored

Device is fully

accessible

Time

Table3. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min

Typ

Max

Unit

tVSL

VCC(min) To CS# Low

tPUW

Time Delay Before Write Instruction

VWI

Write Inhibit Voltage

2.1

2.3

2.5

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register

contains 00H (all Status Register bits are 0).

8.3. DATA RETENTION AND ENDURANCE

Parameter

Test Condition

Min

Units

Minimum Pattern Data Retention Time

150℃

Years

125℃

Years

Erase/Program Endurance

-40 to 85℃

100K

Cycles

8.4. LATCH UP CHARACTERISTICS

Parameter

Min

Max

Input Voltage Respect To VSS On I/O Pins

-1.0V

VCC+1.0V

VCC Current

-100mA

100mA

GD25Q41ASIGY Datasheet(PDF) 41 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25Q41ASIGY Datasheet(HTML) 41 Page - GigaDevice Semiconductor (Beijing) Inc.

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