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WFF2N60 Datasheet(PDF) 3 Page - Wisdom technologies Int`l |
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WFF2N60 Datasheet(HTML) 3 Page - Wisdom technologies Int`l |
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3 / 7 page ![]() 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 150℃ Notes : ※ 1. V GS = 0V 2. 250µs Pulse Test 25℃ V SD, Source-Drain voltage [V] 246 8 10 10 -1 10 0 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 40V 2. 250µs Pulse Test V GS, Gate-Source Voltage [V] 0246 8 10 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V Note : I ※ D = 2.0 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 C oss C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Notes : ※ 1. V GS = 0 V 2. f = 1 MHz C rss C iss V DS, Drain-Source Voltage [V] 012 3 456 0 3 6 9 12 15 18 V GS = 20V V GS = 10V Note: T ※ J = 25℃ I D, Drain Current [A] 10 -1 10 0 10 1 10 -2 10 -1 10 0 V GS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Notes : ※ 1. 250µs PulseTest 2. T C = 25℃ V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
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