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WFP840 Datasheet(PDF) 2 Page - Wisdom technologies Int`l |
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WFP840 Datasheet(HTML) 2 Page - Wisdom technologies Int`l |
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2 / 7 page ![]() (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.50 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0 A -- 0.70 0.85 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.0 A -- 7.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF Coss Output Capacitance -- 150 195 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 8.0 A, RG = 25 Ω -- 25 60 ns tr Turn-On Rise Time -- 75 160 ns td(off) Turn-Off Delay Time -- 125 260 ns tf Turn-Off Fall Time -- 75 160 ns Qg Total Gate Charge VDS = 400 V, ID = 8.0A, VGS = 10 V -- 38 50 nC Qgs Gate-Source Charge -- 8 -- nC Qgd Gate-Drain Charge -- 13 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/µs -- 270 -- ns Qrr Reverse Recovery Charge -- 1.89 -- µC |
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