2N7002EQ

Document number: DS42859 Rev. 2 - 2

2 of 7

www.diodes.com

November 2020

© Diodes Incorporated

2N7002EQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

292

233

mA

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

334

267

mA

Maximum Body Diode Forward Current (Note 6)

IS

334

mA

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

1

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

0.5

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

244

°C/W

Power Dissipation (Note 6)

PD

0.7

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

186

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60





V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

IDSS





1.0

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS





±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.0



2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)





1.3

1.6

3

4

Ω

VGS = 10V, ID = 250mA

VGS = 4.5V, ID = 200mA

Diode Forward Voltage

VSD



0.8

1.5

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



35



pF

VDS = 30V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss



4.4



pF

Reverse Transfer Capacitance

Crss



2.8



pF

Gate Resistance

Rg



188



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg



0.3



nC

VDS = 30V, ID = 250mA

Total Gate Charge (VGS = 10V)

Qg



0.5



nC

Gate-Source Charge

Qgs



0.1



nC

Gate-Drain Charge

Qgd



0.1



nC

Turn-On Delay Time

tD(ON)



5



ns

VDD = 30V, VGS = 10V,

Rg = 25Ω, ID = 200mA

Turn-On Rise Time

tR



2



Turn-Off Delay Time

tD(OFF)



26



Turn-Off Fall Time

tF



13



Reverse Recovery Time

tRR



18



ns

IF = 1A, di/dt = 100A/µs

Reverse Recovery Charge

QRR



8.6



nC

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.