DMTH6016LFDFWQ

Datasheet number: DS40959 Rev. 4 - 2

2 of 8

www.diodes.com

January 2021

© Diodes Incorporated

DMTH6016LFDFWQ

Marking Information

Date Code Key

Year

2017

2018

2019

2020

2021

2022

2023

2024

Code

E

F

G

H

I

J

K

L

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = 10V

TA = +25°C

TA = +100°C

ID

9.4

6.6

A

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

IDM

70

A

Continuous Source-Drain Diode Current (Note 7)

IS

3.0

A

Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)

ISM

70

A

Avalanche Current, L = 0.1mH

IAS

15.3

A

Avalanche Energy, L = 0.1mH

EAS

11.7

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.06

W

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

141

°C/W

Total Power Dissipation (Note 7)

TA = +25°C

PD

2.3

W

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

63

°C/W

Thermal Resistance, Junction to Case (Note 7)

TC = +25°C

RθJC

9.6

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

66 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: H = 2020)

M = Month (ex: 9 = September)

66