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WFU2N60 Datasheet(PDF) 2 Page - Wisdom technologies Int`l

Part # WFU2N60
Description  N-Channel MOSFET
PDF  8 Pages
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Manufacturer  WISDOM [Wisdom technologies Int`l]
Direct Link  http://www.wisdom-technologies.com/index.aspx
Logo WISDOM - Wisdom technologies Int`l

WFU2N60 Datasheet(HTML) 2 Page - Wisdom technologies Int`l

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Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
600
-
-
V
Δ
BVDSS/
Δ
TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
0.6
-
V/°C
IDSS
Drain-Source Leakage Current
VDS = 600V, VGS = 0V
--
10
uA
VDS = 480V, TC = 125 °C
--
100
uA
IGSS
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
--
100
nA
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
-
4.0
V
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 0.9A
-4.0
5.0
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
320
420
pF
Coss
Output Capacitance
-
35
46
Crss
Reverse Transfer Capacitance
-
4.5
6.0
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD =300V, ID =2.0A, RG =25Ω
(Note 4, 5)
-
830
ns
tr
Rise Time
-
23
60
td(off)
Turn-off Delay Time
-
25
60
tf
Fall Time
-
28
70
Qg
Total Gate Charge
VDS =480V, VGS =10V, ID =2.0A
(Note 4, 5)
-
9.5
13
nC
Qgs
Gate-Source Charge
-
1.6
-
Qgd
Gate-Drain Charge(Miller Charge)
-
4.0
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
--
1.8
A
ISM
Pulsed Source Current
-
-
6.0
VSD
Diode Forward Voltage
IS =1.8A, VGS =0V
-
-
1.4
V
trr
Reverse Recovery Time
IS=2.0A, VGS=0V, dIF/dt=100A/us
-230
-
ns
Qrr
Reverse Recovery Charge
-
1.0
-
uC
WFD/U2N60
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 68mH, IAS =1.8A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.



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