STP85N15F4 datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Electrical characteristics

STB85N15F4, STP85N15F4

4/12

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

150

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = max rating

µA

VDS = max rating,TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

0.015

0.019

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

8320

Coss

Output capacitance

600

Crss

Reverse transfer

capacitance

230

Total gate charge

VDD = 80 V, ID = 85 A,

VGS = 10 V

(see Figure 3)

140

Qgs

Gate-source charge

TBD

Qgd

Gate-drain charge

TBD

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 75 V, ID = 40 A

RG =4.7 Ω VGS = 10 V

(see Figure 2)

TBD

td(off)

Turn-off-delay time

Fall time

VDD = 75 V, ID = 40 A,

RG =4.7 Ω, VGS = 10 V

(see Figure 2)

TBD

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