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STB85NF55T4 Datasheet(PDF) 2 Page - STMicroelectronics |
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STB85NF55T4 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 18 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 55 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 80 A IDM(2) Drain current (pulsed) 320 A PTOT Total power dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C EAS(3) Single-pulse avalanche energy 980 mJ dv/dt(4) Peak diode recovery voltage slope 10 V/ns Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V 4. ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W STB85NF55T4, STP85NF55 Electrical ratings DS2569 - Rev 12 page 2/18 |
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