Electrical characteristics

STF10NK60Z(045Y)

4/13

Doc ID 16548 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

600

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating, Tj=125 °C

1

50

µA

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20 V, VDS = 0

±

10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 4.5 A

0.65

0.75

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward

transconductance

VDS =15 V, ID = 4.5 A

7.8

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

1370

156

37

pF

pF

pF

Coss eq

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80%

Equivalent output

capacitance

VGS=0, VDS =0 to 480 V

90

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=480 V, ID = 8 A

VGS =10 V (see Figure 16)

50

10

25

70

nC

nC

nC