STF12N50U datasheet(3/12 Pages) STMICROELECTRONICS

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STF12N50U

Electrical ratings

Doc ID 17202 Rev 1

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

10 (1)

Current is limited by wire features.

Drain current (continuous) at TC = 100 °C

6 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

40 (1)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

230

dv/dt (3)

ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VESD-(G-S) G-S EDS (HBM C=100 pF; R=1.5 kΩ)

4000

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

4.17

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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