Electrical characteristics

STF20N65M5,STFI20N65M5,STFW20N65M5

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DocID024223 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 1 mA

650

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 650 V

1

µA

VGS = 0, VDS = 650 V,

TC=125 °C (1)

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 9 A

0.160

0.190

Ω

Notes:

(1)Defined by design, not subject to production test

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz

-

1434

-

pF

Coss

Output capacitance

-

38

-

pF

Crss

Reverse transfer

capacitance

-

3.7

-

pF

Co(tr)(1)

Equivalent capacitance

time related

VGS = 0, VDS = 0 to 520 V

-

118

-

pF

Co(er)(2)

Equivalent capacitance

energy related

-

35

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID=0 A

-

3.5

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 9 A,

VGS = 0 to 10 V

(see Figure 18: "Test circuit for

gate charge behavior")

-

36

-

nC

Qgs

Gate-source charge

-

7.5

-

nC

Qgd

Gate-drain charge

-

18

-

nC

Notes:

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.