Electrical characteristics

STF40N60M2, STFI40N60M2, STFW40N60M2

4/18

DocID026364 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

600

V

IDSS

Zero gate voltage

drain current ()

VGS = 0, VDS = 600 V

1

µA

VGS = 0, VDS = 600 V,

TC=125 °C

(1)

1.

Defined by design, not subject to production test

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 17 A

0.078

0.088

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz

-

2500

-

pF

Coss

Output capacitance

-

117

-

pF

Crss

Reverse transfer

capacitance

-2.4

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

342

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID = 0

-

4.4

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 34 A,

VGS = 10 V

(see Figure 17: Gate charge

test circuit)

-57

-

nC

Qgs

Gate-source charge

-

10

-

nC

Qgd

Gate-drain charge

-

25.5

-

nC