STG3P3M25K120 datasheet(4/11 Pages) STMICROELECTRONICS

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Electrical characteristics

STG3P3M25K120

4/11

Doc ID 15914 Rev 1

Electrical characteristics

(Ts= 25 °C unless otherwise specified)

Table 4.

IGBT-inverter parameters

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1 mA

1200

ICES

Collector cut-off Current

(VGE = 0)

VCE= 1200 V

vCE= 1200 V, Ts= 125°C

500

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20 V

±100

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 1 mA

4.5

6.5

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 20 A

VGE= 15 V, IC= 20 A, Ts=125 °C

3.1

3.0

3.85V

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

gfs

(1)

Pulsed: pulse duration= 300 µs, duty cycle 1.5%

Forward transconductance

VCE = 15 V, IC= 20 A

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

2520

170

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 760 V, IC = 20 A,

VGE = 15 V

Figure 3

105

Table 6.

Switching on/off

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 760 V, IC = 20 A

RG= 10 Ω, VGE= ±15 V,

Figure 4

840

A/µs

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 760 V, IC = 20 A

RG= 10 Ω, VGE= ±15 V,

Ts=125 °C, Figure 4

760

A/µs

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