STGW40H65DFB datasheet(3/16 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter

saturation voltage

VGE = 15 V, IC = 40 A

1.6

VGE = 15 V, IC = 40 A,

TJ = 125 °C

1.7

VGE = 15 V, IC = 40 A,

TJ = 175 °C

1.8

Forward on-voltage

IF = 40 A

1.7

2.45

IF = 40 A, TJ = 125 °C

1.4

IF = 40 A, TJ = 175 °C

1.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage

current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

5412

Coes

Output capacitance

198

Cres

Reverse transfer

capacitance

107

Total gate charge

VCC = 520 V, IC = 40 A, VGE = 0

to 15 V (see Figure 28. Gate

charge test circuit)

210

Qge

Gate-emitter charge

Qgc

Gate-collector charge

STGW40H65DFB

Electrical characteristics

DS9533 - Rev 9

page 3/16

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