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STGWA40IH65DF Datasheet(PDF) 2 Page - STMicroelectronics |
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STGWA40IH65DF Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 15 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC Continuous collector current at TC = 25 °C 80 A Continuous collector current at TC = 100 °C 40 ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 40 A Continuous forward current at TC = 100 °C 20 IFP(1) Pulsed forward current 120 PTOT Total power dissipation at TC = 25 °C 238 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.63 °C/W Thermal resistance junction-case diode 2.08 RthJA Thermal resistance junction-ambient 50 STGWA40IH65DF Electrical ratings DS11801 - Rev 3 page 2/15 |
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