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STGWA50IH65DF Datasheet(PDF) 4 Page - STMicroelectronics |
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STGWA50IH65DF Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() Table 6. IGBT switching characteristics (snubbed inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eoff (1) Turn-off switching energy L = 100 μH, Csnub = 22 nF VCC = 320 V, RG = 10 Ω, IC = 50 A (see Figure 22. Test circuit for snubbed inductive load switching) - 284 - μJ L = 100 μH, Csnub = 22 nF, VCC = 320 V, RG = 10 Ω, IC = 50 A, TJ = 175 °C (see Figure 22. Test circuit for snubbed inductive load switching) - 469 - 1. Including the tail of the collector current. STGWA50IH65DF Electrical characteristics DS11796 - Rev 3 page 4/14 |
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