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STM32H745II Datasheet(PDF) 144 Page - STMicroelectronics |
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STM32H745II Datasheet(HTML) 144 Page - STMicroelectronics |
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144 / 252 page ![]() Electrical characteristics STM32H745xI/G 144/252 DS12923 Rev 1 Low-speed internal (LSI) RC oscillator tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - - 4 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 57. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 58. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4(1) 1. Guaranteed by test in production. 32 32.6(1) kHz TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29.76(2) 2. Guaranteed by characterization results. - 33.6(2) TJ = –40 to 125 °C, VDD = 1.62 to 3.6 V 29.4 - 33.6 TJ = –40 to 140 °C, VDD = 1.62 to 3.6 V 29.4 - 33.6 tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(3) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA |
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