STM32L010C6 datasheet(46/89 Pages) STMICROELECTRONICS

46 / 89 page

Electrical characteristics

STM32L010C6

46/89

DS12324 Rev 3

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Table 22. Current consumption in Run mode vs code type, code with data processing

running from RAM(1)

Symbol

Parameter

Conditions

fHCLK

Typ

Unit

IDD (Run

from

RAM)

Supply current in

Run mode, code

executed from

RAM, Flash

memory switched

OFF

fHSE = fHCLK up to 16 MHz,

included,

fHSE = fHCLK/2 above 16 MHz

(PLL ON)(2)

Range 3

VCORE =1.2 V

VOS[1:0] = 11

Dhrystone

4 MHz

385

µA

CoreMark

395

Fibonacci

360

while(1)

265

Range 1

VCORE =1.8 V

VOS[1:0] = 01

Dhrystone

32 MHz

4.5

CoreMark

4.65

Fibonacci

4.2

while(1)

3.05

1. Guaranteed by characterization results, not tested in production, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Table 23. Current consumption in Sleep mode

Symbol

Parameter

Conditions

fHCLK

(MHz)

Typ

Max(1)

Unit

IDD

(Sleep)

Supply current

in Sleep

mode, Flash

memory OFF

fHSE = fHCLK up to 16 MHz

included,

fHSE = fHCLK/2 above 16

MHz (PLL ON)(2)

Range 3,

VCORE =1.2 V,

VOS[1:0] = 11

136.5

µA

258

100

170

Range 2,

VCORE =1.5 V,

VOS[1:0] = 10

125

190

230

310

450

540

Range 1,

VCORE =1.8 V,

VOS[1:0] = 01

275

360

555

650

1350

1600

MSI clock

Range 3,

VCORE =1.2 V,

VOS[1:0] = 11

0.065

0.524

4.2

115

190

HSI16 clock source (16

MHz)

Range 2,

VCORE =1.5 V,

VOS[1:0] = 10

585

690

Range 1,

VCORE =1.8 V,

VOS[1:0] = 01

1500

1700

STM32L010C6 Datasheet(PDF) 46 Page - STMicroelectronics

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