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STP9N80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP9N80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() July 2016 DocID028461 Rev 3 1/16 This is information on a product in full production. www.st.com STP9N80K5, STW9N80K5 N- channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STP9N80K5 800 V 0.90 Ω 7 A STW9N80K5 Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP9N80K5 9N80K5 TO-220 Tube STW9N80K5 TO-247 1 2 3 TO-247 1 2 3 TAB TO-220 |
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