STW70N65DM6 datasheet(6/15 Pages) STMICROELECTRONICS

Part #	STW70N65DM6

Description	N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 15 page

Figure 7. Capacitance variations

GADG060620191330CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 8. Coss stored energy vs. VDS

GADG060620191332EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 9. Normalized gate threshold voltage vs.

temperature

GADG050620191111VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

Tj (°C)

ID = 250 µA

Figure 10. Normalized on-resistance vs. temperature

GADG050620191125RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

Tj (°C)

VGS = 10 V

Figure 11. Normalized V(BR)DSS vs. temperature

GADG060620191329VTH

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

Tj (°C)

ID = 1 mA

Figure 12. Source-drain diode forward characteristics

GADG060620191330SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

Tj = -50 °C

Tj = 25 °C

Tj = 150 °C

STW70N65DM6, STWA70N65DM6

Electrical characteristics (curves)

DS12313 - Rev 2

page 6/15

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