T435T-600FP datasheet(3/9 Pages) STMICROELECTRONICS

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DocID17632 Rev 3

3/9

T435T-600FP

Characteristics

Table 3. Static electrical characteristics

Symbol

Test conditions

Value

Unit

VTM

(1)

ITM = 5.7 A, tp = 380 µs

Tj = 25 °C

MAX

1.6

VTO

(1)

Threshold voltage

Tj = 125 °C

MAX

0.9

(1)

Dynamic resistance

Tj = 125 °C

MAX

100

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX

5µA

Tj = 125 °C

For both polarities of A2 pin referenced to A1 pin

Table 4. Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (ac)

4.3

°C/W

Rth(j-a)

Junction to ambient

Figure 1. Maximum power dissipation versus

rms on-state current (full cycle)

Figure 2. On-state current (rms) versus case

temperature (full cycle)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

180°

P(W)

IT(RMS)(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

125

α=180°

T(RMS)(A)

TC(°C)

Figure 3. On-state current (rms) versus ambient

temperature

(free air convection)

Figure 4. Relative variation of thermal

impedance versus pulse duration

0.0

0.5

1.0

1.5

2.0

2.5

100

125

α=180°

T(RMS)(A)

Tamb(°C)

K=[Z

th/Rth]

1.0E-02

1.0E-01

1.0E+00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

th(j-a)

th(j-c)

tP(s)

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