VS-VSK.230..PbF Series

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Vishay Semiconductors

Revision: 12-Nov-2018

3

Document Number: 93053

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Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Junction operating temperature range

TJ

-40 to +130

°C

Storage temperature range

TStg

-40 to +150

Maximum thermal resistance,



junction to case per junction

RthJC

DC operation

0.125

K/W

Typical thermal resistance,



case to heatsink per module

RthCS

Mounting surface flat, smooth, and greased

0.02

Mounting



torque ± 10 %

MAGN-A-PAK to heatsink

A mounting compound is recommended and

the torque should be rechecked after a period

of about 3 h to allow for the spread of the

compound.

4 to 6

Nm

busbar to MAGN-A-PAK

Approximate weight

500

g

17.8

oz.

Case style

MAGN-A-PAK

R CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION AT TJ MAXIMUM

RECTANGULAR CONDUCTION AT TJ MAXIMUM

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.230-

0.009

0.010

0.010

0.020

0.032

0.007

0.011

0.015

0.020

0.033

K/W

Average On-state Current (A)

200

240

160

120

90

100

110

120

130

80

60

70

80

40

0

Ø

Conduction Angle

30°

60°

90°

120°

VSK.230..Series

R

thJC (DC) = 0.125 K/W

180°

Average On-state Current (A)

250

300

350

400

200

150

90

100

110

120

130

100

60

70

80

50

0

VSK.230..Series

R

thJC (DC) = 0.125 K/W

Conduction Period

Ø

30°

DC

60°

90°

120°

180°