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BTB16-600SWRG Datasheet(PDF) 5 Page - STMicroelectronics

Part # BTB16-600SWRG
Description  Snubberless™, logic level and standard 16 A Triacs
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTB16-600SWRG Datasheet(HTML) 5 Page - STMicroelectronics

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Figure 6. On-state characteristics (maximum values)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
ITM(A)
VTM(V)
Tj max.
Vto = 0.85 V
Rd = 25 mΩ
Tj = Tj max.
Tj = 25 °C
Figure 7. Surge peak on-state current versus number of
cycles
1
1 0
100
1000
0
20
40
60
80
100
120
140
160
180
ITSM(A)
Numb er of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =85°C
C
Figure 8. Non-repetitive surge peak on-state current for a
sinusoidal
0. 01
0. 10
1. 00
10. 00
100
1000
3000
ITSM(A),I t (A s)
2
2
ITSM
dI/dt limitation:
50A/µs
puls e wi th width t < 10 ms
p
t (ms)
p
T initial=25°C
j
Figure 9. Relative variation of gate trigger current
-40
-20
02
04
06
08
0
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T( °C)
j
IGT, IH, IL[Tj] /
IGT
IH & IL
holding current and latching current versus junction
temperature (typic al values)
IGT, IH, IL[Tj = 25 °C]
Figure 10. Relative variation of critical rate of decrease of
main current versus (dV/dt)c (typical values)
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dl/dt)c [(dV/dt)c] / specified (dl/dt)c
(dV/dt)c (V/µs)
C
SW/T1610
T1635/T1650/CW/BW
Snubberless and logic level types
B
Figure 11. Relative variation of critical rate of decrease of
main current versus (junction temperature (typical values)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dl/dt)c [Tj] / (dl/dt)c [Tj specified]
Tj(°C)
T1610, T1635, T1650, BTA16, BTB16
Characteristics (curves)
DS2114 - Rev 11
page 5/18



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