1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 76 °C

40

A

ITSM

Non repetitive surge peak on-state current

(full cycle,Tj initial = 25 °C)

t = 16.7 ms

420

A

t = 20 ms

400

I2t

I2t value for fusing

tp = 10 ms

1000

A2s

dl/dt

Critical rate of rise of on-state current,

IG = 2 x IGT, tr ≤ 100 ns

F = 120 Hz, Tj = 25 °C

50

A/µs

VDRM/VRRM

Repetitive peak off-state voltage (50-60 Hz)

600

V

VDSM/VRSM

Non repetitive peak off-state voltage

tp = 10 ms, Tj = 25 °C

700

V

IGM

Peak gate current

tp = 20 µs, Tj = 125 °C

8

A

VGM

Peak gate voltage

8

V

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Vins.

Insulation RMS voltage, 1 minute (UL1557 file E81734)

2.5

kV

Tstg

Storage temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

TL

Maximum lead temperature for soldering during 10 s

260

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrants; Tj

Value

Unit

IGT(1)

VD = 12 V, RL = 33 Ω

I - II - III

Max.

50

mA

VGT

Max.

1.3

V

VGD

VD = 600 V, RL = 3.3 kΩ

I - II - III

Tj = 125 °C

Min.

0.2

V

IL

IG = 1.2 x IGT

I - III

Max.

70

mA

II

Max.

160

mA

IH (2)

IT = 500 mA, gate open

Max.

85

mA

dV/dt (2)

VD = 402 V, gate open

Tj = 125 °C

Min.

1000

V/µs

(dl/dt)c (2)

Snubberless™ (dV/dt)c > 20 V/μs

Tj = 125 °C

Min.

25.1

A/ms

1. Minimum IGT is guaranteed at 5% of IGT max

2. For both polarities of A2 referenced to A1.

T4050-6PF

Characteristics

DS12857 - Rev 1

page 2/11