Symbol

Parameters

Quadrant

BTA16

BTB16

Unit

C

B

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 125 °C

Min.

200

400

V/µs

(dV/dt)c(2)

(dI/dt)c = 7 A/ms, Tj = 125 °C

Min.

5

10

V/µs

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless and logic level (3

quadrants)

Symbol

Parameters

Quadrant

T1610 / BTA16-

SW / BTB16-

SW

T1635 /

BTA16-CW /

BTB16-CW

T1650 /

BTA16-BW /

BTB16-BW

Unit

IGT(1)

VD = 12 V, RL = 30 Ω

I - II - III

Max.

10

35

50

mA

VGT

Max.

1.3

V

VGD

VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C

Min.

0.2

V

IH(2)

IT = 500 mA

Max.

15

35

50

mA

IL

IG = 1.2 IGT

I - III

Max.

25

50

70

mA

II

Max.

30

60

80

(dV/dt)(2) VD = 67 % VDRM gate open, Tj = 125 °C

Min.

40

500

1000

V/µs

(dI/dt)c(2)

(dV/dt)c = 0.1 V/μs, Tj = 125 °C

Min.

8.5

A/ms

(dV/dt)c = 10 V/μs, Tj = 125 °C

3.0

Without snubber, Tj = 125 °C

8.5

14

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Table 5. Thermal resistance

Symbol

Parameters

Value

Unit

Rth(j-c)

Max. junction to case (AC)

TO-220AB / D²PAK

1.2

°C/W

TO-220AB insulated

2.1

Rth(j-a)

Junction to ambient (S = 2 cm²)

D²PAK

45

Junction to ambient

TO-220AB / TO-220AB ins

60

1. Copper surface under tab.

T1610, T1635, T1650, BTA16, BTB16

Characteristics

DS2114 - Rev 11

page 3/18